FQP17P06
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP17P06
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole P-Channel number of channels:1 79 W -60 V Continuous Drain Current (ID):17 A 27 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -60 V |
| Length | 10.1 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 120 mΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -17 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 79 W |
| Power Dissipation | 79 W |
| Threshold Voltage | -4 V |
| Number of Channels | 1 |
| Input capacitance | 900 pF |
| Continuous Drain Current (ID) | 17 A |
| Rds On Max | 120 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | P-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Rise Time | 100 ns |
| Dual Supply Voltage | -60 V |
| Gate Charge | 27 nC |
| Drain to Source Resistance | 120 mΩ |
| Nominal Vgs | -4 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
Stock: 757
Distributors
pcbx
pcbxUnit Price$1.67657
Ext.Price$1.67657
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.67657 | $1.67657 |
| 10 | $1.32352 | $13.23520 |
| 25 | $1.04482 | $26.12050 |
| 50 | $0.82479 | $41.23950 |
| 100 | $0.74214 | $74.21400 |
| 300 | $0.66575 | $199.72500 |
| 500 | $0.59723 | $298.61500 |
| 1000 | $0.55064 | $550.64000 |
| 3000 | $0.51968 | $1559.04000 |
| 5000 | $0.49047 | $2452.35000 |